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Metal-Insulator-Semiconductor Structure As an Ohmic Contact to a Compound Semiconductor

IP.com Disclosure Number: IPCOM000064300D
Original Publication Date: 1985-Jun-01
Included in the Prior Art Database: 2005-Feb-18

Publishing Venue

IBM

Related People

Authors:
Kirchner, PD Pettit, GD Woodall, JM [+details]

Abstract

The detrimental effect of the inherent 0.8 eV barrier at the surface of a compound semiconductor such as gallium arsenide (GaAs) on the resistance of an ohmic contact thereto is overcome by using a metal- insulator-semiconductor (MIS) structure in which the I region is thin enough to pass large tunneling currents and in which the height of the MIS interface is close to the difference between the S and I conduction bands or electron affinities. The band diagram for the MIS structure is shown in the figure.