Browse Prior Art Database

USE OF PLASMA-GROWN OXYFLUORIDES OF GaAs FOR DEVICE SIDEWALL PROTECTION AND PASSIVATION

IP.com Disclosure Number: IPCOM000064305D
Original Publication Date: 1985-Jun-01
Included in the Prior Art Database: 2005-Feb-18

Publishing Venue

IBM

Related People

Authors:
Knoedler, CM [+details]

Abstract

The growth of a layer of oxyfluoride in an oxygen/CF4 plasma will serve both to protect the sidewalls and the surface of a semiconductor structure of GaAs and/or GaAlAs during an ion implantation step. In addition, after fabrication, the GaAs or GaAlAs oxyfluoride layer will serve as a passivation layer since surface states are reduced by this material.