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Gaseous Arsenic Source From Solid Arsenic

IP.com Disclosure Number: IPCOM000064522D
Original Publication Date: 1985-Jul-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Hovel, HJ Kuech, TF [+details]

Abstract

In a semiconductor annealing system where light is employed to supply heat to a GaAs semiconductor wafer sample between a first heat zone that pyrolyzes the higher vapor ingredient source and a second heat zone that maintains the sample zone above the condensation temperature of the higher vapor pressure ingredient, a solid As effusion cell may be used in the first heat zone to provide a constant As flux over the wafer sample.