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Fully Implanted Bipolar Structure

IP.com Disclosure Number: IPCOM000064538D
Original Publication Date: 1985-Jul-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
El-Kareh, B Garnache, RR [+details]

Abstract

A fully implanted merged bipolar structure forming a lateral PNP device and a vertical NPN device is designed to ensure planarity of a surface during contact and trench definition. The structure improves a trench fill process as well as groundrules and allows for silicide contact metallurgy. As a result of this process the contact edges are sealed with nitride and the intrinsic base profile is controlled. The process description is as follows: 1. Start with a p- wafer 11, e.g., silicon (Fig. 1). 2. Grow about 20 nm of thin screen oxide 12. 3. Implant deep boron, if required. 4. Define the substrate contact in the photoresist 13. 5. Implant subcollector arsenic 14 through screen oxide 12. 6. Etch screen oxide 12. 7. Strip resist 13, grow cap oxide, anneal, and drive-in. 8.