Original Publication Date: 1985-Aug-01
Included in the Prior Art Database: 2005-Feb-19
The improved double-boosted phase-driver features low input capacitance, minimal creep, gated breakdown protection and very low active power. The driver circuit design has improved isolation on node N1 without the use of a capacitor to drive the gate of transistor 8. Also, the gate of transistor 18 is connected to node 12 instead of node 4 which tends to prevent node 7 from dropping prematurely in best case conditions (when node 4 would tend to creep up the most). To minimize the potential for gated breakdown of transistor 1 (should node 9 go to ground) node 1 is isolated faster by pulling node 9 low before allowing it to rise to VH . This prevents charge from leaking off node 1 into PHIN, while still allowing node 9 to rise to VH .