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First Level Metallurgy Blister Elimination Process

IP.com Disclosure Number: IPCOM000064698D
Original Publication Date: 1985-Aug-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Chicotka, RJ Emmons, DF Gajda, J Schnitzel, RH [+details]

Abstract

Described is a new metallurgy process sequence that eliminates the presence of hydrogen gas at the chromium, aluminum, copper interface before further metallization steps take place in the process. The formation of hydrogen gas at this interface causes blistering in the next metallization layer which is detrimental to film integrity. The proposed nine-step process sequence that accomplishes the elimination of H2 at the layer interface is as follows: - Deposit platinum (blanket). - In-situ lower temperature 150ŒC. - Deposit chromium (blanket). - Apply photoresist to contacts. - RIE etch chrome, CC14 . - Ion mill or RF sputter clean platinum. - Remove photoresist at contacts. - Simultaneous formation of platinum silicide and chrome oxide with appropriate heat treatment.