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Method for Determining Thickness of Polymer Contamination on Silicon After CF4/H2

IP.com Disclosure Number: IPCOM000064721D
Original Publication Date: 1985-Aug-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Oehrlein, GS [+details]

Abstract

This article describes a method by which the amount of polymer deposition caused by CF4/H2 RIE (reactive ion etching) on Si can be measured accurately. Polymer contamination of Si surfaces in CF4/H2 RIE is a problem encountered in the manufacture of VLSI (very large-scale integration) devices e.g., in the opening of contact holes. Therefore, no simple method was available to quantify the degree of contamination, e.g., the thickness of the polymeric contamination. Such a simple method is described herein by which it is possible to quantify the thickness of CF4/H2-induced polymer layers very accurately. The method is based on ellipsometry, using a HeNe laser as a light source.