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Ohmic Contacts to Semiconductor Devices Using Barrier Layers of Aluminum and Titanium Disclosure Number: IPCOM000064763D
Original Publication Date: 1985-Sep-01
Included in the Prior Art Database: 2005-Feb-19

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Farrar, PA Geffken, RM [+details]


This aluminum-based metallurgy technique provides ohmic contacts to both n- and p-type silicon and incorporates ohmic barrier metal layers of aluminum for p-type contacts and a refractory metal for n-type contacts. Evaporated metals are defined by sequential lift-off deposition steps. Fig. 1 shows a partially processed metal-oxide semiconductor (MOS) device including p-type substrate 10 having recessed oxide isolation 12 on its surface. Contact holes 14, 16 and 18 are to be provided for a metal interconnect layer, not shown in Fig. 1. The following process steps can be used to etch the desired vias and form the contact metallurgy.