Electrical Misalignment Monitor/Gauge With High Sensitivity for VLSI Processing/Fabrication
Original Publication Date: 1985-Sep-01
Included in the Prior Art Database: 2005-Feb-19
A test structure is disclosed for magnified measurement of the alignment accuracy of a contact relative to a conductive region in VLSI (very large-scale integration) devices. The principle of the invention is shown in Fig. 2. The structure measures the alignment accuracy of a contact A, such as a base contact, to a conductive region. The contact A is provided with an inclined portion (designated sliding contact A') which is formed with the same mask as contact A. Similarly, contact C is provided with an inclined portion (designated sliding contact C'). Contacts C and C' are formed with the same mask as contacts A and A'. The conductive region (designated standing contact B') is formed with a different mask and is connected to contact B.