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Etchant for Removing High Temperature Oxidation-Protecting Films for Copper on Glass Disclosure Number: IPCOM000064823D
Original Publication Date: 1985-Sep-01
Included in the Prior Art Database: 2005-Feb-19

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Fasano, BV LaRose, JJ [+details]


In plasma panel fabrication, conductor arrays of chrome-copper-chrome on flat glass plates have a layer of silica based dielectric formed thereover. The final fabrication step is to remove this dielectric at the edges of the panel to allow access to the copper conductors for electrical connection. In reclaiming certain defective plasma panels, it is necessary to reapply a dielectric coating over the conductors, subject the panel to an oven cycle, and again strip the dielectric from the conductors. To prevent oxidation of the copper conductors, a potassium silicide solution is used as an oxidation burner during subsequent thermal processing in air. The conventional etchant for silica-based coatings is hydrofluoric acid. However, its health hazards and insidious destructive nature make it undesirable.