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RF Modulation Device and Technique for Plasma Processing and Diagnostics Disclosure Number: IPCOM000064892D
Original Publication Date: 1985-Sep-01
Included in the Prior Art Database: 2005-Feb-19

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Bumble, B Cuomo, JJ Shivashankar, SA [+details]


The process plasma is a complex energetic gas composed of electrons, ions, neutral atoms and molecules, and atoms and molecules in excited states. Each plasma is characterized by its composition, density, and energy distribution of the gas particles. These parameters determine etch rates and profiles in reactive ion etching (RIE). They also determine deposition rates and substrate heating in sputtering systems. The parameters are usually interactive, thus making it difficult to effect a product's characteristics without extensive experimentation and redesign. In many processes it would be desirable to control the population of one gas species over that of another. By simply pulsing the discharge excitation source on and off, there will be a higher average population of longer lived energetic species.