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Sample Preparation Technique for Delineating Interfacial Films on Device Multilayer Structures

IP.com Disclosure Number: IPCOM000064920D
Original Publication Date: 1985-Sep-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Gajda, JJ Irish, TH Trudeau, FG [+details]

Abstract

This article proposes use of a colloidal silica slurry as a final polishing agent in the preparation of cross-sections of semiconductor devices for SEM (scanning electron microscope) analysis. This will avoid potential damage which may otherwise be caused by alumina slurries. Additionally, this article proposes an aluminum etch which will not attack oxide films on the specimen. In preparing semiconductor device specimens for SEM analysis, there exist many formulations for grinding/polishing of the specimens. One conventional approach to metallographic sectioning [*] uses a combination of chemical and mechanical polishing as the final preparation stage. A 0.1-micron alumina slurry is used as the abrasive in the mechanical step to enhance viewing of via hole interfacial films in the SEM.