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Methods of Producing Single-Crystal Silicon on Silicon Dioxide

IP.com Disclosure Number: IPCOM000064966D
Original Publication Date: 1985-Oct-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Cade, PE Lasky, JB Velasquez, PC [+details]

Abstract

Recently, a new method of producing single-crystal silicon (SCS) on thermally grown SiO2 consisting of anodically bonding two wafers together and then using any one of a number of etch-stop-controlled, etch-back techniques, to leave only a thin layer, on one of the original wafers, at the bonded interface, has been described. This teaches alternative process steps in such a process that avoids possible contamination problems and enhances the versatility of the overall process by making it more compatible with three-dimensional processing. The process consists of the steps of: growing p-epitaxial layer on a .008 ohm-cm p+ substrate, growing a gate oxide, depositing a thin LPCVD (low pressure chemical vapor deposition) silicon nitride layer, depositing a layer of BSG, followed by depositing a layer of BSG on a second wafer.