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Selective Growth in Metal Organic Chemical Vapor Deposition Heterojunction Field-Effect Transistor Fabrication

IP.com Disclosure Number: IPCOM000065016D
Original Publication Date: 1985-Oct-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Kuech, TF Theis, TN [+details]

Abstract

SiO2 and Si3N4 can be used as masks for selective growth of GaAs and AlGaAs by metal organic chemical vapor deposition (MOCVD). Heterojunction field-effect transistors (FETs) with relaxed lithographic tolerances are then fabricated. In situ etching and selective regrowth allow the fabrication of device structures with selectively grown contact or gate areas. Three such structures are given as examples in the figures with the step descriptions corresponding to the figure number, i.e., I(1), I(2), etc. I is an example of selective regrowth of a gate structure. II and III are examples of selectively regrown contact areas. Fig. I______ Step 1: Ion implant or diffuse source and drain contact regions. Step 2: Deposit SiO2 and define gate area by a through hole.