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Breakdown Voltage Measurement of Thin Insulator Films by Current Ramping Technique

IP.com Disclosure Number: IPCOM000065072D
Original Publication Date: 1985-Oct-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Havreluk, RP Nguyen, TN Ray, AK [+details]

Abstract

This article describes a fast and reliable technique for breakdown voltage measurement. To evaluate thin dielectric films for VLSI circuit applications, a fast and reliable breakdown measurement technique is required. The conventional method involves ramping the voltage across a MOS capacitor and recording its value when the current through the insulator exceeds a preset level. This method does not work satisfactorily for thin dielectric films because a single breakdown detection current cannot determine correctly the breakdown voltage of a shorted capacitor at one location and a good capacitor (capable of sustaining a large Fowler- Nordheim (F-N) tunneling current without permanent disintegration) at another location.