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Submicron MODFET Device

IP.com Disclosure Number: IPCOM000065107D
Original Publication Date: 1985-Oct-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Tiwari, S [+details]

Abstract

A crystallographically controlled etched groove permits MODFET (Modulation Doped Field-Effect Transistor) devices with submicron dimensions, extremely low contact resistances and thus show principles of ballistic motion. It also has twice the current capability of a conventional MODFET. MODFETs have been shown to have good high frequency and high speed performance indicating a good potential for these devices for both analog and digital application. These devices have the potential of showing extremely good speed if parasitics are reduced sufficiently. The device is fabricated in accordance with the following figures. (Image Omitted) A n+/p-/n+ GaAs structure is grown first, where the p- region has a thickness of approximately the gate length desired.