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Failure Mechanisms and Detect Modeling of Polysilicon Trench Technology Disclosure Number: IPCOM000065114D
Original Publication Date: 1985-Oct-01
Included in the Prior Art Database: 2005-Feb-19

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Cavaliere, JR Ho, BK Moitie, RA [+details]


A method of yield analysis has been proposed which, in effect, would make it possible to "design" the yield to be anticipate in the polysilicon trench (PST) isolation process. A model has been developed for use in conjunction with existing software to compute the critical area (Acr) of the trench of the product built with PST technology. This critical area is then combined with the defect density (DD) to obtain the number of defects. A computer will be used to assess the seriousness of the defects as to distribution and circuit sensitivity so as to determine their effect on the product. The isolation between active devices is realized by means of deep trenches made through the recessed oxide isolation (ROI) and through the single crystal silicon. These trenches are then filled with polysilicon.