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Thermal Probe for Semiconductor Material Diagnostics

IP.com Disclosure Number: IPCOM000065125D
Original Publication Date: 1985-Oct-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Schick, JD Walsh, RH Wilson, HR [+details]

Abstract

This article describes a measuring technique which permits rapid qualitative determination of whether a test specimen (e.g., a semiconductor material or circuit element) is P-type or N-type by utilizing the Seebeck effect. The determination of N-type or P-type material is accomplished by the use of a dual electrical probe apparatus, each probe having an ultrafine tip of about 0.5 micron radius. These small probes allow the analysis of present-day functional integrated circuit elements. One of the probes is heated by a resistance-type induction heating element and is placed on the surface of the area being analyzed. The second probe is unheated and is placed on the surface of the same area.