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Cross-Coupled Array of Mosfets

IP.com Disclosure Number: IPCOM000065190D
Original Publication Date: 1985-Nov-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
De La Moneda, FH [+details]

Abstract

The left (L) and right (R) devices of a differential MOSFET (metal- oxide-semiconductor field-effect transistor) pair are usually made up of several MOSFET devices in parallel. These devices are paralleled using a technique known as cross-coupling. In the case of four devices placed within a rectangle, cross-coupling is provided by paralleling the device pairs located along the diagonals. This minimizes any electrical unbalance between the L and R devices arising from non-uniform distributions of structural parameters or charges across the wafer. This requires additional space for the cross-coupling wires. As the number of devices requiring cross-coupling increases, the space occupied by the cross-coupling wires becomes a problem.