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Unique Thin Film Structure for High Temperature Substrate

IP.com Disclosure Number: IPCOM000065306D
Original Publication Date: 1985-Nov-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Cadoff, IB Ormond, DW [+details]

Abstract

This invention proposes to fabricate high density capacitors with thin film deposition techniques which will provide a high dielectric constant. Part of the invention is a novel method of in situ heating of the substrate to achieve the desired high temperature near 700ŒC. Most thin film dielectrics have very low dielectric constants (<50). When deposited on an in situ heated substrate, near 700ŒC, the constants are high. In this procedure, where the unique high temperature substrate is heated by direct radiation during RF (radio frequency) deposition, the dielectric constant films can have values near 1000. The structure of the MIM (metal-insulator-metal) device is shown in the figure. Palladium (a noble metal) or platinum, is deposited on the backside of the silicon wafer 2 to a thickness of several microns.