Browse Prior Art Database

LOW TEMPERATURE PROCESS FOR FORMING SUPERCONDUCTING Nb3Si

IP.com Disclosure Number: IPCOM000065315D
Original Publication Date: 1985-Nov-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Baglin, JE Clark, GJ Tsuei, CC [+details]

Abstract

Ion beam mixing [*] of Nb films (300 ˜) deposited on SiO2 can be used to produce a layer of the compound Nb3Si. The ions are 200 keV Xe+, at a dose of 1 x 1016 ions/cm2 . The Nb3Si was shown to be stoichiometric by backscattering, and the phase was identified by X-ray and electron diffraction. Implantation (mixing) can be done at room temperature at 200ŒC and at 400ŒC, with the same compound produced in each case. The silicide layer, is superconducting, with Tc about 7k. Theoretically, it has been predicted that Nb3Si should have the highest Tc of any known material, namely, about 30Œk. The success of this method for producing Nb3Si lies in the combination of ion beam mixing and the metal/SiO2 system. HighTc Nb3Si can be used as contacts and conductors directly on an insulating substrate (SiO2). Reference [*] B. Y.