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Non-Destructive Testing of MOSFET Oxides Disclosure Number: IPCOM000065333D
Original Publication Date: 1985-Nov-01
Included in the Prior Art Database: 2005-Feb-19

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Related People

Hartstein, AM Koch, RH [+details]


When studying Metal-Oxide-Silicon Field-Effect-Transistors (MOSFETs) a common problem is in determining if the current through the oxide of the device is spread out across the entire gate, or localized in a few small regions in the plane of the oxide. For instance, several failure modes in MOSFETs are local, such as dielectric breakdown and/or filamentary conduction. A new technique is described for determining if a current or component of a current through a MOSFET oxide is local or spread out across the device area. This technique also can be used to determine the actual position of a current path through the oxide if it is local. The current through the oxide or its higher derivatives is measured as a function of gate to source voltage with a zero source to drain voltage.