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Trench-Defined Lateral PNP Transistor Structure

IP.com Disclosure Number: IPCOM000065462D
Original Publication Date: 1985-Dec-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Bergeron, DL [+details]

Abstract

A reliable lateral PNP transistor structure, defined by emitter and collector regions abutting a trench filled with, e.g., polyimide, is provided which has an emitter potential field shield disposed over the active base region and the trench. As illustrated in Figs. 1 and 2, wherein Fig. 1 is a plan view and Fig. 2 is a sectional view taken through line 2-2 of Fig. 1, the structure includes a P type semiconductor substrate 10 on which is grown an N- type epitaxial layer 12 with an N+ subcollector region 14 disposed therebetween. An N+ reach-through region 16 is formed between the surface of epitaxial layer 12 and N+ subcollector region 14. Spaced- apart P type emitter and collector regions 18 and 20, respectively, are formed within epitaxial layer 12 at the surface thereof. A trench 22, e.g.