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AuNiGe CONTACTS TO GaAs

IP.com Disclosure Number: IPCOM000065527D
Original Publication Date: 1985-Dec-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Callegari, AC Murakami, M [+details]

Abstract

Microstructure changes during processing of AuNiGe ohmic contacts to GaAs having resistance of less than 0.50 ohm-mm by providing, as shown in Fig. 1, an Ni first layer of 40-70 ˜, followed by an Au-13% Ge layer, an Ni layer and an Au layer. (Image Omitted) The layers of Fig. 1 upon annealing form compound layers, as shown in Fig. 2. (Image Omitted) The relation of contact resistance to Ni layer thickness is shown in Fig. 3. (Image Omitted)