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Process for Making Bulk Cmos Borderless Contacts Using Low Resistivity Gate Wiring Disclosure Number: IPCOM000065560D
Original Publication Date: 1985-Jan-01
Included in the Prior Art Database: 2005-Feb-19

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Related People

Roberts, S Ryan, JG Troutman, RR [+details]


A process is disclosed for making borderless N+ and P+ contact regions using a low resistivity rare earth boride film as an electrode interconnect material and as a boron diffusion source.