Browse Prior Art Database

Process for Making Bulk Cmos Borderless Contacts Using Low Resistivity Gate Wiring

IP.com Disclosure Number: IPCOM000065560D
Original Publication Date: 1985-Jan-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Roberts, S Ryan, JG Troutman, RR [+details]

Abstract

A process is disclosed for making borderless N+ and P+ contact regions using a low resistivity rare earth boride film as an electrode interconnect material and as a boron diffusion source.