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A process is disclosed for making borderless N+ and P+ contact regions using a low resistivity rare earth boride film as an electrode interconnect material and as a boron diffusion source.
English (United States)
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Process for Making Bulk Cmos Borderless Contacts Using Low Resistivity
A process is disclosed for making borderless N+ and P+ contact regions
using a low resistivity rare earth boride film as an electrode interconnect material
and as a boron diffusion source.
The process steps which are described in conjunction with Figs. 1-3 are as
follows: 1. Form a borderless diffusion contact mask 12 which overlies a silicon
substrate 10 having P-well and N-well regions. The contact mask may be made
of SiO2 . 2. Form a N+ contact region 18 through the opening in the contact
mask. This may be formed by the ion implantation of Asand can be followed by a
drive-in step. 3. Etch an opening in the mask for a definition of a P+ contact
region. 4. Deposit a rare earth boride or a rare earth boron silicon ternary film 22. For example, binary borides of the rare earth metals, such as the
hexaborides of lanthanum and yttrium may be used for this application. 5. Etch
the boride to form a gate interconnect pattern. 6. Drive-in the boron and arsenic.