Browse Prior Art Database

Narrow Base Width Process Enhancement Method

IP.com Disclosure Number: IPCOM000065646D
Original Publication Date: 1985-Apr-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Forney, GB [+details]

Abstract

To enhance device performance in current process technologies, one successful approach has been to narrow the base width of NPN devices. This is usually accomplished by extending the high temperature drive-in cycle during emitter formation to locate the emitter-base junction deeper in the base region and consequently closer to the collector-base junction.