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Narrow Base Width Process Enhancement Method Disclosure Number: IPCOM000065646D
Original Publication Date: 1985-Apr-01
Included in the Prior Art Database: 2005-Feb-19

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Forney, GB [+details]


To enhance device performance in current process technologies, one successful approach has been to narrow the base width of NPN devices. This is usually accomplished by extending the high temperature drive-in cycle during emitter formation to locate the emitter-base junction deeper in the base region and consequently closer to the collector-base junction.