Enhanced Epitaxial Profile for High Voltage Devices
Original Publication Date: 1985-Apr-01
Included in the Prior Art Database: 2005-Feb-19
The fabrication of lateral PNP and P+ resistor device structures in N (As doped) epitaxial layers has been found to be susceptible to the influence of oxide charges. The problem becomes more acute in the case where low concentration epitaxial layers are required and, as a consequence, prone to inversion of the epitaxial surface. This inversion forms a leakage path between adjacent P+ (B doped) regions of the device. This article describes a method of controlling the arsine (AsH3) during epitaxial growth to eliminate this inversion.