Browse Prior Art Database

Triple Poly Cell With Field Shield for Dynamic Random Access Memory

IP.com Disclosure Number: IPCOM000065690D
Original Publication Date: 1985-Jun-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Plass, DW [+details]

Abstract

A triple poly cell with field shield for DRAM offers high density while retaining a conventional DRAM architecture and timings. By combining the polysilicon field shield concept of metal gate technology with the cross-poly concept used in the Shared Word Line design, both the recessed oxide (ROX) and the metal contacts in the array are eliminated. Both of these cause density limitations.