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Protection of Fet Gates From Static Charge Breakdown

IP.com Disclosure Number: IPCOM000065691D
Original Publication Date: 1985-Jun-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Cady, RC Ketcham, WF [+details]

Abstract

Very high input-impedance-signal-monitoring devices are subject to gate breakdown due to static charge buildup where there is no high resistance bleed off device between the input field-effect transistor (FET) gate and source. Due to gradually increasing gate leakage over a period of time, the accuracy of the device measurements, both in amplitude and waveform, steadily degenerates. By adding 2 protective clamp diodes to the existing device the need for periodic FET replacement and re-calibration is eliminated.