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Distortion-free Imaging in High Temperature Baked Photoresist Disclosure Number: IPCOM000065701D
Original Publication Date: 1985-Jun-01
Included in the Prior Art Database: 2005-Feb-19

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Marinaccio, FA Paolilli, MJ [+details]


By employing two sequentially applied layers of photoresist the problem of reticulation and resultant distortion of the pattern caused by high temperature baking of the photoresist after pattern imaging can be eliminated.