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The presented process removes Al/Cu stud metal skirts, bypassing the chrome layer, contacting the Pt/Si layer, causing glass delamination, low SBDVF and degraded BVEB junctions.
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Al/Cu Metal Skirt Removal Process
The presented process removes Al/Cu stud metal skirts, bypassing the
chrome layer, contacting the Pt/Si layer, causing glass delamination, low SBDVF
and degraded BVEB junctions.
Depositing stud metal forms an Al/Cu skirt that contacts the Pt/Si layer on
non-overlap contacts. Subsequent high temperature process steps such as
annealing and quartzing, cause a reaction between Al and Pt/Si to take place
along the skirt edges of the level stud metal, creating PtAl2. The resulting
volume expansion at the skirt sites acts as a wedge between the quartz and Pt/Si
which lifts the quartz, causing delamination. The solution to this problem is to
remove the porous passivation layer over the Pt/Si, and remove the Al/Cu skirt
contacting the Pt/Si, just before the level quartzing process. The following etch
solution is used as dip etch for two to five seconds immediately followed with a
deionized (DI) water rinse: l.0 ml - HF l.5 ml - HCL 2.5 ml - HN03 95.0 ml - DI