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Stacked I/O One Device Random Access Memory Cell Disclosure Number: IPCOM000065798D
Original Publication Date: 1985-Sep-01
Included in the Prior Art Database: 2005-Feb-19

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Coppens, PD Fifield, JA [+details]


Nearly the entire physical area of a semiconductor memory cell which utilizes a vertically integrated structure may be dedicated to the storage capacitor and with the I/O transistor located on top of the storage capacitor a density advantage exists.