Browse Prior Art Database

Stacked I/O One Device Random Access Memory Cell

IP.com Disclosure Number: IPCOM000065798D
Original Publication Date: 1985-Sep-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Coppens, PD Fifield, JA [+details]

Abstract

Nearly the entire physical area of a semiconductor memory cell which utilizes a vertically integrated structure may be dedicated to the storage capacitor and with the I/O transistor located on top of the storage capacitor a density advantage exists.