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Low Temperature Donor Annealing of Silicon Crystals and/or Wafers

IP.com Disclosure Number: IPCOM000065806D
Original Publication Date: 1985-Sep-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Bischoff, BK Strudwick, TH [+details]

Abstract

A two-step donor anneal procedure applicable to control resis- tivities in as-grown Czochralski crystals or wafers is disclosed.