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Polysilicon/Diffused Sense Line Structure for Dynamic Random-Access Memory Cells

IP.com Disclosure Number: IPCOM000065817D
Original Publication Date: 1985-Aug-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Bakeman, PE Scheuerlein, RE Walker, WW [+details]

Abstract

A fully self-aligned diffused region under a polysilicon shunt line creates a sense line structure which enhances the density of, particularly, the shared word line DRAM (dynamic random-access memory) cell [*]. The fully self-aligned silicon/diffusion sense line (SL) structure is a parallel and highly capacitively coupled polysilicon line over a diffused line to shunt the resistance of the diffused line during signal transfer. The structural details identified in the figure show gaps in the thick recessed oxide (ROX) regions "A" through which an N diffusion region under a polysilicon line, Poly 1, at 10, forms a continuous sense line from cell to cell all the way back to a sense amplifier (not shown).