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Advanced Metallurgy Process Disclosure Number: IPCOM000065846D
Original Publication Date: 1985-Oct-01
Included in the Prior Art Database: 2005-Feb-19

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Dockerty, RC Nelson, EA [+details]


An advanced metallurgy process has been proposed which simplifies passivation techniques required with Schottky Barrier Diodes (SBDs) in making semi-conductor devices. Instead of a pre- platinum (pre-Pt) and post-Pt passivation, both of which require emitter nitride passivation, this process uses pre-Pt passivation with the elimination of the emitter nitride. This method gives a non-consumable contact to the emitter TiW/AlCuHfAlCu (titanium- tungsten/aluminum-copper-hafnium-aluminum-copper) and PtSi(platinum- silicide)/TiW/AlCuHfAlCu to all other device contacts.