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Method of Manufacturing Integrated Capacitors On Multilayer Circuits Disclosure Number: IPCOM000065874D
Original Publication Date: 1985-Oct-01
Included in the Prior Art Database: 2005-Feb-19

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Eastman, DE Logue, JC Walker, GF Wen, S [+details]


The present method is directed to the integrated manufacture of high dielectric constant capacitors. The present method does not require heating of the multilayer substrate or sintering of high melting point dielectric materials. Metal and dielectric powders are sequentially transferred to a wafer substrate by plasma spraying to form the multilayer capacitor.