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Ge As a Dopant in Molecular Beam Epitaxial Gaas And Gaalas

IP.com Disclosure Number: IPCOM000065878D
Original Publication Date: 1985-Oct-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Heiblum, M Osterling, LE [+details]

Abstract

Ge is an amphoteric dopant in GaAs and GaAlAs and the type of doping performance is controllable under different molecular beam epitaxial growth conditions.