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Ge As a Dopant in Molecular Beam Epitaxial Gaas And Gaalas Disclosure Number: IPCOM000065878D
Original Publication Date: 1985-Oct-01
Included in the Prior Art Database: 2005-Feb-19

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Heiblum, M Osterling, LE [+details]


Ge is an amphoteric dopant in GaAs and GaAlAs and the type of doping performance is controllable under different molecular beam epitaxial growth conditions.