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Ge is an amphoteric dopant in GaAs and GaAlAs and the type of doping performance is controllable under different molecular beam epitaxial growth conditions.
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Ge As a Dopant in Molecular Beam Epitaxial Gaas And Gaalas
Ge is an amphoteric dopant in GaAs and GaAlAs and the type of doping
performance is controllable under different molecular beam epitaxial growth
The Ge performs as a n-type dopant and produces electron gases in GaAs
and GaAlAs with lower growth temperature and higher As/Ga flux ratio in
molecular beam epitaxial growth. The Ge performs as a p-type dopant and
produces hole gases through the use of higher substrate temperatures of the
order of 610OEC with a lower As/Ga flux ratio in molecular beam epitaxial growth.