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Improved Etch Uniformity by Ultraviolet Hardening of the Photoresist

IP.com Disclosure Number: IPCOM000065885D
Original Publication Date: 1985-Nov-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Bergendahl, AS Duncan, BF Hakey, MC Horak, DV [+details]

Abstract

By exposing positive photoresist to ultraviolet (UV) radiation, the resist becomes less reactive to etchants used in reactive ion etching (RIE). This slower reactivity results in a more uniform rate of film etching over large areas, especially when low etchant gas flow rate and low pressure of etch gas (<30 millitorr) isused in a planar RIE system. This UV hardening process minimizes the removal of the photoresist in the downstream direction of reactive gas flow, and results in more uniform etching of the film.