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Disclosed is a process for reducing the contact resistance of TiW (titanium-tungsten) with Si (silicon) by in-situ sputter cleaning the contact openings for a short period of time prior to TiW deposition.
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A Process to Reduce Tiw Contact Resistance With Si
Disclosed is a process for reducing the contact resistance of TiW (titanium-
tungsten) with Si (silicon) by in-situ sputter cleaning the contact openings for a
short period of time prior to TiW deposition.
TiW is used as contact metallurgy for semiconductor devices because of its
innumerable advantages. However, one of the disadvantages of TiW is that it
normally forms a high resistance contact with Si, for example, due to the
presence of contaminants and/or native oxide in the contact opening. This
contact resistance can be reduced by subjecting the Si wafer to an in-situ sputter
cleaning step. This step may be accomplished, for example, in a Perkin Elmer
4400 system at about 8 micron argon pressure and 850 W power with an oxide
etch rate of about 50 A/min. for a period of about 30-120 seconds.
The present cleaning process decreases the contact resistance of the TiW
contacts formed on the Si wafers by a factor of approximately 2-8 compared to
the TiW contacts formed without the benefit of the cleaning process. Further, the
contact resistance of TiW contacts formed with the cleaning process is
comparable to that of platinum silicide contacts.