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A Process to Reduce Tiw Contact Resistance With Si

IP.com Disclosure Number: IPCOM000065896D
Original Publication Date: 1985-Nov-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Bhattacharya, SB Nelson, EA Wong, MC [+details]

Abstract

Disclosed is a process for reducing the contact resistance of TiW (titanium-tungsten) with Si (silicon) by in-situ sputter cleaning the contact openings for a short period of time prior to TiW deposition.