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Magnetic Field Enhanced Helium Ion Etching of Metals

IP.com Disclosure Number: IPCOM000065949D
Original Publication Date: 1985-Dec-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Hiraoka, H Lee, J [+details]

Abstract

Helium ion sputtering yields of metals are known to be far smaller than those of argon ion sputtering in the same condition. For instance, the argon sputtering yield of Cu at 600eV ion energy is ten times larger than that of helium ion. This faster etching rate is primarily responsible for the exclusive use of argon sputtering in manufacturing processes, e.g., seed-layer removal, pole tip trimming, and others in manufacturing processes of thin film magnetic recording heads.