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Zirconium Nitride Transistor Gate

IP.com Disclosure Number: IPCOM000065953D
Original Publication Date: 1985-Dec-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Krusin-Elbaum, L Ting, CY Wittmer, M [+details]

Abstract

This article relates generally to integrated circuit fabrication and, more particularly, to the gate construction of field effect transistors.