The following operators can be used to better focus your queries.
( ) , AND, OR, NOT, W/#
? single char wildcard, not at start
* multi char wildcard, not at start
(Cat? OR feline) AND NOT dog?
Cat? W/5 behavior
(Cat? OR feline) AND traits
Cat AND charact*
This guide provides a more detailed description of the syntax that is supported along with examples.
This search box also supports the look-up of an IP.com Digital Signature (also referred to as Fingerprint); enter the 72-, 48-, or 32-character code to retrieve details of the associated file or submission.
Concept Search - What can I type?
For a concept search, you can enter phrases, sentences, or full paragraphs in English. For example, copy and paste the abstract of a patent application or paragraphs from an article.
Concept search eliminates the need for complex Boolean syntax to inform retrieval. Our Semantic Gist engine uses advanced cognitive semantic analysis to extract the meaning of data. This reduces the chances of missing valuable information, that may result from traditional keyword searching.
This article relates generally to integrated circuit fabrication and, more particularly, to the gate construction of field effect transistors.
English (United States)
This text was extracted from a PDF file.
This is the abbreviated version, containing approximately
90% of the total text.
Page 1 of 1
Zirconium Nitride Transistor Gate
This article relates generally to integrated circuit fabrication and, more
particularly, to the gate construction of field effect transistors.
Zirconium nitride can be used as the gate material in FETs in both NMOS
and CMOS technologies. This material offers an appropriate work function as to
threshold voltage, has low resistivity, provides thermal stability, and serves as an
excellent barrier against silicon diffusion. Zirconium nitride also possesses fine
grain size for line definition.
The gate structure can be seen in the figure where a p-type silicon substrate
1 having a silicon dioxide layer 2 has a relatively thick layer 3 of zirconium nitride
reactively sputtered thereon. Polysilicon 4 is chemically vapor deposited over the
nitride. The nitride gate is patterned using a two-step process of reactive ion
etching (RIE) and plasma etching to avoid over- etching of the silicon dioxide
layer. Negative photoresist or aluminum can be used as a mask. Thereafter,
silicon dioxide or polysilicon is deposited by chemical vapor deposition and
etched by RIE to form spacers 5. This passivation is required because of the
fairly low oxidation temperatures of the zirconium nitride. The structure may now
undergo high temperature processing.
Greater stability can be achieved by forming a thin layer of silicon nitride on
silicon dioxide layer 2 prior to deposition of the zirconium nitride gate material.
The silicon nitride layer can be grown b...