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HCl Gettering of Chemical Vapor Deposited Layers Disclosure Number: IPCOM000066029D
Original Publication Date: 1979-Jan-01
Included in the Prior Art Database: 2005-Feb-19

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Gardiner, JR Shepard, JF [+details]


The presence of mobile ion, e.g., Na+, contaminates in chemical vapor deposited layers, e.g., polysilicon, can be overcome by the use of HCl as a getter.