Browse Prior Art Database

HCl Gettering of Chemical Vapor Deposited Layers

IP.com Disclosure Number: IPCOM000066029D
Original Publication Date: 1979-Jan-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Gardiner, JR Shepard, JF [+details]

Abstract

The presence of mobile ion, e.g., Na+, contaminates in chemical vapor deposited layers, e.g., polysilicon, can be overcome by the use of HCl as a getter.