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The presence of mobile ion, e.g., Na+, contaminates in chemical vapor deposited layers, e.g., polysilicon, can be overcome by the use of HCl as a getter.
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HCl Gettering of Chemical Vapor Deposited Layers
The presence of mobile ion, e.g., Na+, contaminates in chemical vapor
deposited layers, e.g., polysilicon, can be overcome by the use of HCl as a
The addition of a small percentage of HCl gas to the reaction mixtures used
to chemically vapor deposit polysilicon effectively removes mobile ion
contamination from the polysilicon. The reaction system that may be used is
However, any halogenated silicon source such as SiCl(4) or SiH(2)Cl(2) can be
The mobile ion contamination can also be removed prior to deposition of the
layer by purging the reaction chamber with HCl in N(2) at a temperature greater
than about 600 degrees C. One effective purge used about 1 percent HCl in
N(2) for 10 minutes of 650 degrees C.
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