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Method of Reducing Arsenic Thermal Diffusion By Noble Gas Ion Implantation

IP.com Disclosure Number: IPCOM000066030D
Original Publication Date: 1979-Jan-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Chu, WK Poponiak, MR [+details]

Abstract

Arsenic distribution in silicon has been controlled by the adjustment of temperature and time in a thermal diffusion process on either ion implanted As or As deposited by any other means in either an inert or an oxidizing ambient.