Browse Prior Art Database

Gettering Process

IP.com Disclosure Number: IPCOM000066035D
Original Publication Date: 1979-Jan-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Buechele, AW Crichton, JM Free, TB Markovits, G Velky, EP [+details]

Abstract

A process for preparing gettered silicon semiconductor wafers includes the following steps: 1. Slice about a 20-mil-thick wafer from a silicon crystal. 2. Grind the surfaces of the wafer with 1200-grit resin bonded wheel to form flat parallel faces. 3. Chamfer the edge of the wafer with fine grit (typically 100 grit). 4. Single-side silica polish the front surface of the wafer, removing only enough material in polishing to eliminate damage produced during grinding. 5. Heat treat the wafer in N at 1000 degrees C for about 3 hours, and quench.