Self-Aligned Submicron Almost Ideal Transistor
Original Publication Date: 1979-Jan-01
Included in the Prior Art Database: 2005-Feb-19
The ideal transistor is a minimum size, fast switching device with high and current independent current gain, which can be realized with a minimum number of well-defined and controlled processing steps. The process should rely on self-aligned processing steps with no critical alignment. The critical considerations and calculations show that such a structure has to meet the following requirements: 1. Self-aligned process (all levels), minimum dimensions (speed, yield) 2. Zero extrinsic base resistance. circular contact (speed) 3. The compensated emitter region (constant current gain, yield) 4. Gettering capabilities within emitter region (yield) 5. High lifetime in emitter region (constant current gain, yield) 6.