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Combined E-Beam X-Ray Lithography Process

IP.com Disclosure Number: IPCOM000066039D
Original Publication Date: 1979-Jan-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Gunther-Mohr, GR Moore, RD North, WD Yourke, HS [+details]

Abstract

It is well known that the use of E-beam exposure in resists sufficiently thick to cover normal vertical device topologies can result in objectionable proximity effects. 0n the other hand, the inherent problems of mask and registration alignment when utilizing X-ray exposure result in problems in X-ray lithography processes. A process is described herein: after which combines the excellent X-ray aspect ratio with the E-beam alignment capability and results in an overall process that eliminates major problems associated with both techniques.