Very Low Dose Ion Implantation By Scattering Method
Original Publication Date: 1979-Jan-01
Included in the Prior Art Database: 2005-Feb-19
Low dose and low energy ion implantation (I/I) can be applied to fabrication of microelectronics. For example, the adjustment of field-effect I/I dosage below 10(12) atoms/cm(2) is extremely difficult to control. This is because of the low current intensity required in attaining I/I uniformity. The lower limit of the current intensity is determined by the limit of control and reproducibility of ion beam defocusing and by the state of the art in the development of low current measuring devices.