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High Performance Bipolar Transistor With Uncompensated Emitter

IP.com Disclosure Number: IPCOM000066053D
Original Publication Date: 1979-Jan-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Horng, CT Schwenker, RO White, JF [+details]

Abstract

In the conventional double diffused bipolar transistor structure, as the device junction depth is reduced to improve the cut-off frequency, control of the integrated base doping in the active base region, while maintaining a low sheet resistance in the external base region, becomes increasingly difficult.