Browse Prior Art Database

Silicon Grooves - Bottom Geometry Control

IP.com Disclosure Number: IPCOM000066056D
Original Publication Date: 1979-Jan-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Burkhardt, PJ Gray, RK Pogge, HB [+details]

Abstract

Enhanced etch rates along the edges on the bottom of silicon (Si) grooves can occur when forming them with reactive ion etching (RIE(si)). The formation of these enhanced etch regions, termed "dovetails", are caused by improper mask geometries, provided that no system parameter effects overshadow the mask geometry effect. In the case of SiO(2), used as a mask for RIE(si), the taper angle of the SiO(2) window should be near or larger than 70 degrees so that no dovetailing will occur in the Si groove (Fig. 1).