Browse Prior Art Database

Silicon Structure With Recessed Isolation Regions

IP.com Disclosure Number: IPCOM000066072D
Original Publication Date: 1979-Jan-01
Included in the Prior Art Database: 2005-Feb-19

Publishing Venue

IBM

Related People

Authors:
Biedermann, E Briska, M Thiel, KP [+details]

Abstract

Recessed oxide regions in a silicon substrate are produced by taking advantage of the preferential thermal oxidation of N+ doped silicon, which leads to an oxide covered structure with a planar surface.