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Silicon Structure With Recessed Isolation Regions Disclosure Number: IPCOM000066072D
Original Publication Date: 1979-Jan-01
Included in the Prior Art Database: 2005-Feb-19

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Biedermann, E Briska, M Thiel, KP [+details]


Recessed oxide regions in a silicon substrate are produced by taking advantage of the preferential thermal oxidation of N+ doped silicon, which leads to an oxide covered structure with a planar surface.